IEEE Computer Society Annual Symposium on VLSI,
Pushing the Limits of Technology, Circuit and Applications for Sub-nm Low Power Design
Dr. Rajiv Joshi
Power has become the key driving force in processor design as the frequency scale-up is reaching saturation. In order to achieve low power system circuit and technology co-design is essential. This talk focuses on related technology and important circuit techniques for nanoscale VLSI circuits. Achieving low power and high performance simultaneously is always difficult. Technology has seen major shifts from bulk to SOI and then to non-planar devices such as FinFET and Trigates.
This talk consists of pros and cons analysis on technology from power perspective and various techniques to exploit lower power. As the technology pushes towards sub-22nm era, process variability and geometric variation in devices can cause variation in power. The reliability also plays an important role in the power-performance envelope. This talk also reviews the methodology to capture such effects and describes all the power components. All the key areas of low power optimization such as reduction in active power, leakage power, short circuit power and collision power are covered. Usage of clock gating, power gating, longer channel, multi-Vt design, stacking, header-footer device techniques and other innovative methods are described for logic and memory. Low power memories are essential part of neural networks and the talk will describe some of these memories slated for machine learning. Finally the talk summarizes key challenges in achieving low power.
Dr. Rajiv V. Joshi is a research staff member and key technical lead at T. J. Watson research center, IBM. He received his B.Tech I.I.T (Bombay, India), M.S (M.I.T) and Dr. Eng. Sc. (Columbia University). His novel interconnects processes and structures for aluminum, tungsten and copper technologies which are widely used in IBM for various technologies from sub-0.5µm to 14nm. He has led successfully predictive failure analytic techniques for yield prediction and also the technology-driven SRAM at IBM Server Group. He commercialized these techniques. He received 3 Outstanding Technical Achievement (OTAs), 3 highest Corporate Patent Portfolio awards for licensing contributions, holds 58 invention plateaus and has over 225 US patents and over 350 including international patents. He has authored and co-authored over 185 papers. He received the Best Editor Award from IEEE TVLSI journal. He is recipient of 2015 BMM award. He is inducted into New Jersey Inventor Hall of Fame in Aug 2014 along with pioneer Nikola Tesla. He is a recipient of 2013 IEEE CAS Industrial Pioneer award and 2013 Mehboob Khan Award from Semiconductor Research Corporation. He is a member of IBM Academy of technology. He served as a Distinguished Lecturer for IEEE CAS and EDS society. He is IEEE, ISQED and World Technology Network fellow and distinguished alumnus of IIT Bombay. He is in the Board of Governors for IEEE CAS. He serves as an Associate Editor of TVLSI. He served on committees of ISLPED (Int. Symposium Low Power Electronic Design), IEEE VLSI design, IEEE CICC, IEEE Int. SOI conference, ISQED and Advanced Metallization Program committees. He served as a general chair for IEEE ISLPED. He is an industry liaison for universities as a part of the Semiconductor Research Corporation. Also he is in the industry liaison committee for IEEE CAS society.
What About Increasing the Functionality of Devices
Pierre-Emmanuel Gaillardon, PhD
University of Utah
Exploiting unconventional physical properties, several nanodevices showed an alternative to Moore’s Law by the increase of their functionality rather than the pure scaling. Innovative device behaviors transduce to new circuit/architecture opportunities. Here, we will introduce Three-Independent-Gate Field Effect Transistors (TIGFETs), a novel class of computation devices, that can, depending on the bias applied to its gate, achieve different modes of operations usually not achievable in a single device. The demonstrated modes of operations are (i) the dynamic reconfiguration of the device polarity; (ii) the dynamic control of the threshold voltage; and (iii) the dynamic control of the subthreshold slope beyond the thermal limit (with a measured steep slope of 6mV/dec over 5 decades of current). I will show both a silicon-based process route and a 2D approach based on WSe2 crystals. Such properties are highly desirable for logic computation. For instance, controllable-polarity devices are logical bi-conditional on both gate values and enable a compact realization of XOR-based logic functions, which are not implementable in CMOS in a compact form. Hyper regular architectures and new EDA tools are then needed to leverage the intrinsic properties of controllable-polarity devices from an application perspective. In this talk, I will cover the different aspects of the design with TIG devices ranging from device fabrication to logic synthesis tools, emphasizing on the importance for interdisciplinary teams in the field of emerging technologies.
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